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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3012 DESCRIPTION *With TO-3PFa package *Complement to type 2SA1232 *High transition frequency APPLICATIONS *Audio frequency power amplifier. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 130 130 5 10 15 100 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3012 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 0.6 1.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.3 2.0 V A ICBO Collector cut-off current VCB=130V; IE=0 50 IEBO Emitter cut-off current VEB=3V; IC=0 50 A hFE-1 DC current gain IC=2A ; VCE=5V 60 320 hFE-2 DC current gain IC=5A ; VCE=5V 40 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 150 pF fT Transition frequency IC=1A ; VCE=5V 60 MHz hFE-1 Classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3012 Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
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